| PART |
Description |
Maker |
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| S29AL016J55TFIR10 S29AL016J55FFIR20 S29AL016J55TFI |
1M X 16 FLASH 3V PROM, 55 ns, PDSO48 LEAD FREE, MO-142DDD, TSOP-48
1M X 16 FLASH 3V PROM, 55 ns, PBGA64
1M X 16 FLASH 3V PROM, 55 ns, PBGA48
1M X 16 FLASH 3V PROM, 55 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
1M X 16 FLASH 5V PROM, 120 ns, CQCC48
1M X 16 FLASH 5V PROM, 120 ns, CPGA50
1M X 16 FLASH 5V PROM, 150 ns, CQCC48
|
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
TVS BIDIRECT 600W 33V SMB 32M的（4米8/2M × 16）位双操
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| AM29SL160CB-90WCC AM29SL160CB-100WCI AM29SL160CB-1 |
1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48
1M X 16 FLASH 1.8V PROM, 100 ns, PBGA48
1M X 16 FLASH 1.8V PROM, 150 ns, PDSO48
|
ADVANCED MICRO DEVICES INC
|
| W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L |
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM
512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PDSO32
512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
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